vishay tsop15..sd1 document number 82071 rev. 8, 15-oct-2002 vishay semiconductors www.vishay.com 1 13 645 ir receiver modules for remote control systems description the tsop15..sd1 - series are miniaturized receivers for infrared remote control systems. pin diode and preamplifier are assembled on lead frame, the epoxy package is designed as ir filter. the demodulated output signal can directly be decoded by a microprocessor. tsop15..sd1 is the standard ir remote control receiver series, support- ing all major transmission codes. the main benefit is the wide receiving angle. features ? photo detector and preamplifier in one package internal filter for pcm frequency improved shielding against electrical field distur- bance ttl and cmos compatibility output active low low power consumption suitable burst length 10 cycles/burst special features improved directivity high immunity against ambient light no occurrence of disturbance pulses at the output block diagram parts table application circuit 30 k ? 2 3 1 v s out demo- gnd pass agc input pin band dulator control circuit part carrier frequency tsop1530sd1 30 khz tsop1533sd1 33 khz tsop1536sd1 36 khz tsop1537sd1 36.7 khz tsop1538sd1 38 khz tsop1540sd1 40 khz tsop1556sd1 56 khz c 1 = 4.7 f tsopxxxx out gnd circuit c r 1 =100 ? +v s gnd transmitter with tsalxxxx v s r 1 +c 1 recommended to suppress power supply disturbances. v o the output voltage should not be hold continuously at a voltage below v o = 3.3 v by the external circuit.
document number 82071 rev. 8, 15-oct-2002 www.vishay.com 2 vishay tsop15..sd1 vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified electrical and optical characteristics t amb = 25 c, unless otherwise specified typical characteristics (t amb = 25c unless otherwise specified) parameter test condition symbol value unit supply voltage (pin 2) v s - 0.3 to + 6.0 v supply current (pin 2) i s 5 ma output voltage (pin 3) v o - 0.3 to + 6.0 v output current (pin 3) i o 5 ma junction temperature t j 100 c storage temperature range t stg - 25 to + 85 c operating temperature range t amb - 25 to + 85 c power consumption (t amb 85 c) p tot 50 mw soldering temperature t 10 s, 1 mm from case t sd 260 c parameter te s t c o n d i t i o n symbol min typ. max unit supply current (pin 2) v s = 5 v, e v = 0 i sd 0.8 1.2 1.5 ma v s = 5 v, e v = 40 klx, sunlight i sh 1.5 ma supply voltage (pin 2) v s 4.5 5.5 v transmission distance e v = 0, test signal see fig.1, ir diode tsal6200, i f = 300 ma d 35 m output voltage low (pin 3) i osl = 0.5 ma, e e = 0.7 mw/m 2 , f = f o , t p /t = 0.4 v osl 250 mv irradiance (30 - 40 khz) pulse width tolerance: t pi - 5/f o < t po < t pi + 6/f o , test signal see fig.1 e e min 0.25 0.4 mw/m 2 irradiance (56 khz) pulse width tolerance: t pi - 5/f o < t po < t pi + 6/f o , test signal see fig.1 e e min 0.3 0.45 mw/m 2 irradiance t pi - 5/f o < t po < t pi + 6/f o e e max 30 w/m 2 directivity angle of half transmission distance ? 1/2 55 deg figure 1. output function e e t t pi * t * t pi 10/fo is recommended for optimal function v o v oh v ol t 16110 optical test signal (ir diode tsal6200, i f = 0.4 a, 30 pulses, f = f 0 , t = 10 ms) output signal t d 1) t po 2) 1) 7/f 0 < t d < 15/f 0 2) t pi ?5/f 0 < t po < t pi +6/f 0 figure 2. pulse length and sensitivity in dark ambient 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1.0 10.0 100.0 1000.010000.0 e e ? irradiance ( mw/m 2 ) 16908 input burst duration = 950 nm, optical test signal, fig.1 output pulse t ? output pulse width ( ms ) po
vishay tsop15..sd1 document number 82071 rev. 8, 15-oct-2002 vishay semiconductors www.vishay.com 3 figure 3. output function figure 4. output pulse diagram figure 5. frequency dependence of responsivity e e t v o v oh v ol t 600 s 600 s t = 60 ms t on t off 94 8134 optical t est signal output signal , ( see fig.4 ) t ,t ? output pulse width ( ms ) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1.0 10.0 100.0 1000.010000.0 e e ? irradiance ( mw/m 2 ) 16909 to ff = 950 nm, optical test signal, fig.3 to n on off 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.7 0.9 1.1 1.3 f/f 0 ? relative frequency 16925 f = f 0 5% f ( 3db ) = f 0 /10 e / e ? rel. responsivity e min e figure 6. sensitivity in bright ambient figure 7. sensitivity vs. supply voltage disturbances figure 8. sensitivity vs. electric field disturbances 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.01 0.10 1.00 10.00 100.00 e ? ambient dc irradiance (w/m 2 ) 16911 correlation with ambient light sources: 10w/m 2 1.4klx (std.illum.a,t=2855k) 10w/m 2 8.2klx (daylight,t=5900k) ambient, = 950 nm e ? threshold irradiance ( mw/m ) e min 2 0.0 0.5 1.0 1.5 2.0 0.1 1.0 10.0 100.0 1000.0 v srms ? ac voltage on dc supply voltage (mv) 16912 f = f o f = 10 khz e ? threshold irradiance ( mw/m ) e min 2 f = 1 khz f = 100 hz e ? threshold irradiance ( mw/m ) 0.0 0.4 0.8 1.2 1.6 0.0 0.4 0.8 1.2 2.0 e ? field strength of disturbance ( kv/m ) 2.0 94 8147 1.6 e min 2 f(e) = f 0
document number 82071 rev. 8, 15-oct-2002 www.vishay.com 4 vishay tsop15..sd1 vishay semiconductors suitable data format the circuit of the tsop15..sd1 is designed in that way that unexpected output pulses due to noise or disturbance signals are avoided. a bandpassfilter, an integrator stage and an automatic gain control are used to suppress such disturbances. the distinguishing mark between data signal and dis- turbance signal are carrier frequency, burst length and duty cycle. the data signal should fulf ill the following conditions: carrier frequency should be close to center fre- quency of the bandpass (e.g. 38 khz). burst length should be 10 cycles/burst or longer. after each burst which is between 10 cycles and 70 cycles a gap time of at least 14 cycles is necessary. for each burst which is longer than 1.8 ms a corre- sponding gap time is necessary at some time in the figure 9. max. envelope duty cycle vs. burstlength figure 10. sensitivity vs. ambient temperature figure 11. relative spectral sensitivity vs. wavelength 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 20 40 60 80 100 120 burst length ( number of cycles / burst ) 16913 f = 38 khz, e e = 2 mw/m 2 max. envelope duty cycle 0.0 0.1 0.2 0.3 0.4 0.5 0.6 ?30?150 153045607590 t amb ? ambient temperature ( q c ) 16918 sensitivity in dark ambient e ? threshold irradiance ( mw/m ) e min 2 750 850 950 1050 0 0.2 0.4 0.6 0.8 1.2 s ( ) ? relative spectral sensitivity rel ? wavelength ( nm ) 1150 94 8408 1.0 figure 12. horizontal directivity ? x figure 13. vertical directivity ? y 94 8153 0 0.4 0.2 0.2 0.4 ?30 d rel ? relative transmission distance 0.6 0.6 010 ? 10 ? 20 20 ?40 x y 0 0.4 0.2 0.2 0.4 ?30 d rel ? relative transmission distance 0.6 94 8152 0.6 010 ?10 ?20 20 ?40
vishay tsop15..sd1 document number 82071 rev. 8, 15-oct-2002 vishay semiconductors www.vishay.com 5 data stream. this gap time should be at least 4 times longer than the burst. up to 800 short bursts per second can be received continuously. some examples for suitable data format are: nec code (repetitive pulse), nec code (repetitive data), toshiba micom format, sharp code, rc5 code, rc6 code, r-2000 code. when a disturbance signal is applied to the tsop15..sd1 it can still receive the data signal. how- ever the sensitivity is reduced to that level that no unexpected pulses will occure. some examples for such disturbance signals which are suppressed by the tsop15..sd1 are: dc light (e.g. from tungsten bulb or sunlight) continuous signal at 38 khz or at any other fre- quency signals from fluorescent lamps with electronic bal- last with high or low modulation (see figure 14 or fig- ure 15). figure 14. ir signal from fluorescent lamp with low modulation 0 5 10 15 20 time ( ms ) 16920 ir signal ir signal from fluorescent lamp with low modulation figure 15. ir signal from fluorescent lamp with high modulation 0 5 10 15 20 time ( ms ) 16921 ir signal ir signal from fluorescent lamp with high modulation
document number 82071 rev. 8, 15-oct-2002 www.vishay.com 6 vishay tsop15..sd1 vishay semiconductors package dimensions in mm 12837
vishay tsop15..sd1 document number 82071 rev. 8, 15-oct-2002 vishay semiconductors www.vishay.com 7 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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